IndiumV3, Russie, Analysis, bibRecord, 000039

Optical characterization of individual quantum dots

Identifieur interne : 000039 ( Russie/Analysis ); précédent : 000038; suivant : 000040

Optical characterization of individual quantum dots

Auteurs : RBID : Pascal:12-0262779

Descripteurs français

Pascal (Inist)
- Photoluminescence, Méthode croissance Stranski-Krastanov, Exciton, Interaction exciton phonon, Effet champ électrique, Effet champ magnétique, Photoexcitation, Indium Gallium Arséniure Mixte, Point quantique, Arséniure d'indium, InGaAs, GaAs.

English descriptors

KwdEn :
- Electric field effects, Exciton phonon interaction, Excitons, Indium Gallium Arsenides Mixed, Indium arsenides, Magnetic field effects, Photoexcitation, Photoluminescence, Quantum dots, Stranski-Krastanov growth method.

Abstract

Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski-Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs dots, several excitonic features with different charge states will be demonstrated. By varying the magnitude of an external electric or magnetic field and/or the temperature, it has been demonstrated that the transportation of carriers is affected and accordingly the charge state of a single QD can be tuned. In addition, we have shown that the charge state of the QD can be controlled also by pure optical means, i.e. by altering the photo excitation conditions. Based on the experience of the developed InAs/GaAs QD system, similar methods have been applied on the InGaN/GaN QD system. The coupling of LO phonons to the QD emission is experimentally examined for both charged and neutral excitons in single InGaAs/GaAs QDs in the apex of pyramidal structures. It is shown that the positively charged exciton exhibits a significantly weaker LO phonon coupling in the μPL spectra than the neutral and negatively charged species, a fact, which is in consistency with model simulations performed.

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Pascal:12-0262779

Le document en format XML

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<date when="2012">2012</date>
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<term>Exciton phonon interaction</term>
<term>Excitons</term>
<term>Indium Gallium Arsenides Mixed</term>
<term>Indium arsenides</term>
<term>Magnetic field effects</term>
<term>Photoexcitation</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Stranski-Krastanov growth method</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Méthode croissance Stranski-Krastanov</term>
<term>Exciton</term>
<term>Interaction exciton phonon</term>
<term>Effet champ électrique</term>
<term>Effet champ magnétique</term>
<term>Photoexcitation</term>
<term>Indium Gallium Arséniure Mixte</term>
<term>Point quantique</term>
<term>Arséniure d'indium</term>
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<front><div type="abstract" xml:lang="en">Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski-Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs dots, several excitonic features with different charge states will be demonstrated. By varying the magnitude of an external electric or magnetic field and/or the temperature, it has been demonstrated that the transportation of carriers is affected and accordingly the charge state of a single QD can be tuned. In addition, we have shown that the charge state of the QD can be controlled also by pure optical means, i.e. by altering the photo excitation conditions. Based on the experience of the developed InAs/GaAs QD system, similar methods have been applied on the InGaN/GaN QD system. The coupling of LO phonons to the QD emission is experimentally examined for both charged and neutral excitons in single InGaAs/GaAs QDs in the apex of pyramidal structures. It is shown that the positively charged exciton exhibits a significantly weaker LO phonon coupling in the μPL spectra than the neutral and negatively charged species, a fact, which is in consistency with model simulations performed.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Optical characterization of individual quantum dots</s1>
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<fA11 i1="08" i2="1"><s1>JANZEN (E.)</s1>
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<fA20><s1>1472-1475</s1>
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<s2>C</s2>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski-Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs dots, several excitonic features with different charge states will be demonstrated. By varying the magnitude of an external electric or magnetic field and/or the temperature, it has been demonstrated that the transportation of carriers is affected and accordingly the charge state of a single QD can be tuned. In addition, we have shown that the charge state of the QD can be controlled also by pure optical means, i.e. by altering the photo excitation conditions. Based on the experience of the developed InAs/GaAs QD system, similar methods have been applied on the InGaN/GaN QD system. The coupling of LO phonons to the QD emission is experimentally examined for both charged and neutral excitons in single InGaAs/GaAs QDs in the apex of pyramidal structures. It is shown that the positively charged exciton exhibits a significantly weaker LO phonon coupling in the μPL spectra than the neutral and negatively charged species, a fact, which is in consistency with model simulations performed.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H67H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Méthode croissance Stranski-Krastanov</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Stranski-Krastanov growth method</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Método crecimiento Stranski-Krastanov</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Exciton</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Excitons</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Interaction exciton phonon</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Exciton phonon interaction</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Interacción excitón fonón</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Effet champ électrique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Electric field effects</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Effet champ magnétique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Magnetic field effects</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Photoexcitation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Photoexcitation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Indium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
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<fC03 i1="11" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>53</s5>
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<fN21><s1>198</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>SACPM 2011 South African Conference on Photonic Materials</s1>
<s2>4</s2>
<s3>Kariega Game Reserve ZAF</s3>
<s4>2011-05-02</s4>
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   |area=    IndiumV3
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   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:12-0262779
   |texte=   Optical characterization of individual quantum dots
}}

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Optical characterization of individual quantum dots

Optical characterization of individual quantum dots

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